Grain‐Boundary Engineering of Monolayer MoS₂ for Energy‐Efficient Lateral Synaptic Devices (Adv. Mater. 32/2021)

Synaptic Devices With lithography-free, directlaser-writing-controlled MoS2/MoS2−xOδ grain boundaries, synaptic devices fabricated by Kai Liu and co-workers, as described in article number 2102435, exhibit short-term and long-term plasticity characteristics that are responsive to electric and light stimulation simultaneously; they also exhibit a low energy consumption that is over 40 times lower than that of conventional complementary metal–oxide–semiconductors