Grafted GaAs Detectors On Lithium Niobate And Glass Optical Waveguides

We report the first integration of a GaAs MSM (metal-semiconductor-metal) detector with LiNbO3 and glass optical waveguides. A 250nm thick GaAs detector layer was fabricated using a recently reported lift-off technique [1] and subsequently grafted onto the waveguide chip. Proof of the optical interaction between the waveguide and its grafted detector was provided by the total absorption of 633nm guided light within a distance of 1mm from the leading edge of the GaAs layer and by the presence of a photocurrent at the detector terminals. We project that the grafting technique reported here will prove useful in the design of new and cost effective optoelectronic devices.