Gate-Tunable Band Edge in Few-Layer MoS₂

Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the <i>K</i> points, whereas in multilayers, they shift to the <i>Q</i> points, midway between the Γ and <i>K</i> points. In this study, we conduct magnetotransport experiments to measure the occupation in the <i>Q</i> and <i>K</i> valleys in four-layer molybdenum disulfide (MoS₂). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid <i>k</i>·<i>p</i> tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS₂, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs.