GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls
Chemical Communications: 3995-3995
Article 2005 English
Authors
UG
Ujjal K. Gautam
SV
S. R. C. Vivekchand
AG
A. Govindaraj
Abstract
1 min read
Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 degrees C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 degrees C, while maintaining dimensional integrity.
Cnr Rao, Ved Varun Agrawal, Kanishka Biswas, Ujjal K. Gautam, Moumita Ghosh, A. Govindaraj, Giridhar U. Kulkarni, K. P. Kalyanikutty, Kripasindhu Sardar, S. R. C. Vivekchand
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