GaN Nanobelt-Based Strain-Gated Piezotronic Logic Devices and

Using the piezoelectric polarization charges created atthe metalGaNnanobelt (NB)interfaceunder straintomodulate transport of local charge carriers across the Schottky barrier, the piezotroniceffectisutilizedtoconvertmechanicalstimuliappliedon the wurtzite-structured GaN NB into electronic controlling signals, basedonwhichtheGaNNBstrain-gatedtransistors(SGTs)havebeen fabricated. By further assembling and integrating GaN NB SGTs, universal logic devices such as NOT, AND, OR, NAND, NOR, and XOR gates have been demonstrated for performing mechanicalelec- tricalcoupledpiezotronic logicoperations. Moreover,basicpiezotronic computationsuchasone-bitbinary addition overtheinput mechanical strains with corresponding computation results in an electrical domain by half-adder has been implemented. The strain-gated piezotronic logic devices may find applications in humanmachine interfacing, active flexible/stretchable electronics, MEMS, biomedical diagnosis/therapy, and prosthetics.