Nanoribbons and flat nanosheets of Ga2O3 have been synthesized by evaporating GaN at high temperature with the presence of oxygen. The as-synthesized nanoribbons and nanosheets are pure, structurally uniform, single crystalline, and free from dislocations. The nanoribbons and the nanosheets all have monoclinic β-Ga2O3 structure. The flat top and bottom surfaces for both nanoribbons and nanosheets are ±(100), the side surfaces are ±(010) and ±(101̄) for nanoribbons and ±(010), ±(101̄) and ±(212̄) for nanosheets. The axis direction of nanoribbon growth is along either [001] or [010].
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