Gallium nitride nanowires with a metal initiated metal‐organic chemical vapor deposition (MOCVD) approach [phys. stat. sol. (b) 241, 2775 (2004)]

Sang‐Kwon Lee; Heon‐Jin Choi; Peter J. Pauzauskie; Peidong Yang; Nam‐Kyu Cho; Hyo‐Derk Park; Eun‐Kyung Suh; K. Y. Lim; Hyung‐Jae Lee

doi:10.1002/pssb.200440009

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Gallium nitride nanowires with a metal initiated metal‐organic chemical vapor deposition (MOCVD) approach [phys. stat. sol. (b) 241, 2775 (2004)]

Article 2005 en

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Abstract The authors add a missing reference to the article published in phys. stat. sol. (b) 241 , 2775 (2004), referring to one of their own earlier papers in Nano Lett. 3 , 1063 (2003). (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Gallium nitride nanowires with a metal initiated metal‐organic chemical vapor deposition (MOCVD) approach <i>[phys. stat. sol. (b) <b>241</b>, 2775 (2004)]</i>

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Gallium nitride nanowires with a metal initiated metal‐organic chemical vapor deposition (MOCVD) approach

Electron Transport through Thin Organic Films in Metal−Insulator−Metal Junctions Based on Self-Assembled Monolayers [<i>J. Am. Chem. Soc.</i> <b>2001</b>, <i>123</i>, 5075−5085].

Epitaxial growth of <i>B</i> <i>a</i> <i>T</i> <i>i</i> <i>O</i>3 thin films at 600 °C by metalorganic chemical vapor deposition

Organic Thin Film Transistors from a Soluble Oligothiophene Derivative Containing Thermally Removable Solubilizing Groups [<i>J. Am. Chem. Soc.</i> <b>2004</b>, <i>126</i>, 1596−1597].

Erratum: Tests of a ladder of density functionals for bulk solids and surfaces [Phys. Rev. B<b>69</b>, 075102 (2004)]