Tunnelling, via X-valley related states, is investigated in GaAs/AlAs/GaAs single-barrier structures. The features in the tunnel current, which are experimentally observed, are associated with resonant tunnelling through the X-valley AlAs quantum well states derived from the conduction band minima, both perpendicular (X x and X y ) and parallel (X z ) to the (100) growth direction and the Si-donor states linked to the X valley. Tunnelling through the impurity states associated with X z and X x y valleys are observed for the first time.
Davit Ghazaryan, M. T. Greenaway, Zihao Wang, Ivan Vera Marun, Jun Yin, Serge Morozov, Alexander Lichtenstein, M. I. Katsnelson, Artem Mishchenko, L. Eaves, A. K. Geǐm, Konstantin ‘kostya’ Novoselov, Abhishek Misra
M. T. Greenaway, Е. Е. Вдовин, Davit Ghazaryan, Abhishek Misra, Artem Mishchenko, Yun Cao, Zihao Wang, John R. Wallbank, Matthew Holwill, Yu. N. Khanin, С. В. Морозов, Kenji Watanabe, Takashi Taniguchi, O. Makarovsky, T. M. Fromhold, A. Patanè, A. K. Geǐm, Vladimir I. Fal’ko, Konstantin ‘kostya’ Novoselov, L. Eaves
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