Frequency Domain Analysis of Photoprocesses at Illuminated Semiconductor Electrodes by Transient Transformation

In order to design more efficient photoelectrochemical cells and photovoltaic devices, it is necessary to identify the limiting processes and to determine the kinetics of the controlling reactions. In this paper we report on a technique for the analysis of relaxation of photoprocesses at illuminated semiconductor electrodes in the frequency domain by transformation of the perturbating function and the transient response. Results are presented for simulated photocurrent transients showing that diagnostic parameters can be extracted from both real‐axis and imaginary‐axis transformation.