Fluorinated Graphene: Fluorinated Graphene in Interface Engineering of Ge‐Based Nanoelectronics (Adv. Funct. Mater. 12/2015)

The unstable germanium oxide formed at the interface between the channel and dielectric layer has impeded the progress of Ge-based nanoelectronics for more than 60 years. On page 1805, W. Ren, Z. Di, and co-workers integrate fluorinated graphene as an effective diffusion barrier layer to suppress the formation of unstable interfacial oxide between HfO2 gate oxide and Ge channel, thus obtaining the well-behaved Ge based MOS device with negligible C–V hysteresis, extremely low leakage, and superior equivalent oxide thickness.