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First Principles Modeling of the Growth of Crystalline Oxides on Silicon: The First Two Monolayers — G. M. Stocks (2000) | RDL Network
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First Principles Modeling of the Growth of Crystalline Oxides on Silicon: The First Two Monolayers
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Kresse Georg
Universität Vienna
First Principles Modeling of the Growth of Crystalline Oxides on Silicon: The First Two Monolayers
Article
2000
en
Authors
+4 more
GS
G. M. Stocks
NM
Nassrin Moghadam
RM
R. E. McKee
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