In this paper, we present a device to be a memristor should exhibit three characteristic fingerprints: (a) Pinched hysteresis loop in the voltage v vs. current i plane, namely, the v-i loci always passes through origin for any bipolar periodic input voltage v(t). (b) Beyond a certain critical frequency ω*, the area of the pinched hysteresis lobe decreases monotonically as the frequency of the periodic input signal increases and (c) the shape of the pinched hysteresis loop varies with frequency f and shrinks to a single-valued function through the origin, as the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints are presented.
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