Field emission properties of boron and nitrogen doped carbon nanotubes

Field electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of 1μA, the current density (J) was 4A/cm2 at 368V/μm for B-doped CNTs and at 320V/μm for N-doped CNTs grown on W tips, compared with the value of 1.5A/cm2 at 290V/μm for undoped CNTs. FE currents upto 400μA drawn from both B- and N-doped CNTs are stable for more than 3h.