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Fatigue in polycrystalline silicon thin films influence of initial oxide thickness. — R. Temmerman (2006) | RDL Network
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Fatigue in polycrystalline silicon thin films influence of initial oxide thickness.
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Robert O. Ritchie
University of California, Berkeley
Fatigue in polycrystalline silicon thin films influence of initial oxide thickness.
Article
2006
English
Authors
+3 more
RT
R. Temmerman
ES
Eric A. Stach
BB
Brad Boyce
Abstract
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