Fabrication of robust suspended structures using tilted e-beam lithography

We report a technique for fabricating suspended structures using tilted electron beam lithography. This technique enables the formation of beveled anchor profiles, which significantly increase structural integrity compared to previous techniques. We demonstrate the technique by fabricating a suspended top gate over a graphene device, achieving a breakdown electric field of up to 1.5 V/nm, and induced carrier densities of ∼ 7 × 1012 cm−2, both representing more than 10-fold increase from previous methods. This technique provides a pathway to robust suspended electronic structures capable of withstanding large electrostatic forces common in two-dimensional material systems and nanoelectromechanical devices.