Skip to content
RDL
Network
Ecosystem
Switch app
TR
About
FAQ
Sign in
Get started
Experimental Evidence for Local Fading Memory Effects in TaOx ReRAM Cells — N. Schmitt (2024) | RDL Network
Back
Cite
Save
Save for later
Share
Home
Publications
Experimental Evidence for Local Fading Memory Effects in TaOx ReRAM Cells
Shared by
Leon O Chua
University of California, Berkeley
Experimental Evidence for Local Fading Memory Effects in TaOx ReRAM Cells
Article
2024
en
Authors
+10 more
NS
N. Schmitt
IM
Ioannis Messaris
AD
Ahmet Şamil Demirkol
Discussion
(0)
Sign in
to like and join the discussion.
No comments yet. Be the first to comment.
Related publications
Article
2023
Local Fading Memory Effects in a Tantalum Oxide ReRAM Cell from Hewlett Packard Labs
Alon Ascoli
,
N. Schmitt
,
Ioannis Messaris
,
Ahmet Şamil Demirkol
,
Ronald Tetzlaff
,
John Paul Strachan
,
Leon O Chua
Article
2024
Theoretico-experimental analysis of bistability in the oscillatory response of a TaOx ReRAM to pulse train stimuli
N. Schmitt
,
Alon Ascoli
,
Ioannis Messaris
,
Ahmet Şamil Demirkol
,
Stephan Menzel
,
Vikas Rana
,
Ronald Tetzlaff
,
Leon O Chua
Article
2016
Fading Memory Effects in a Memristor for Cellular Nanoscale Network Applications
Alon Ascoli
,
Ronald Tetzlaff
,
Leon O Chua
,
John Paul Strachan
,
R. Stanley Williams
Article
2016
The First Ever Real Bistable Memristors—Part I: Theoretical Insights on Local Fading Memory
Alon Ascoli
,
Ronald Tetzlaff
,
Leon O Chua
Article
2016
The First Ever Real Bistable Memristors—Part II: Design and Analysis of a Local Fading Memory System
Alon Ascoli
,
Ronald Tetzlaff
,
Leon O Chua
Discussion(0)
No comments yet. Be the first to comment.