We report substantially reduced fatigue and electrical leakage in BiFeO3 membranes fabricated by releasing epitaxial (001) BiFeO3 films from the Si substrates on which they were grown. Fatigue-free switching behavior of up to 1010cycles was observed for BiFeO3 membranes with Pt top electrodes, while as-grown films break down at ∼109cycles. This is attributed to the low coercive field of BiFeO3 membranes and their being free from substrate clamping. In contrast, (111) BiFeO3 films exhibit significant fatigue at the same electric field. Epitaxial (001) BiFeO3 membranes with low coercive field are very promising for lead-free ferroelectric memory and magnetoelectric devices.
Ho Won Jang, Seung‐Hyub Baek, Daniel Ortiz, C. M. Folkman, R. R. Das, Ying‐Hao Chu, J. X. Zhang, V. Vaithyanathan, Samrat Choudhury, Y. B. Chen, Xiaoqing Pan, Darrell G. Schlom, Long‐Qing Chen, R. Ramesh, Chang‐Beom Eom
C. M. Folkman, Seung‐Hyub Baek, Ho Won Jang, Chang‐Beom Eom, C.T. Nelson, Xiaoqing Pan, Yulan Li, Long‐Qing Chen, Amit Kumar, Venkatraman Gopalan, S. K. Streiffer
Ho Won Jang, Daniel Ortiz, Seung‐Hyub Baek, Chad M. Folkman, Rasmi R. Das, Padraic Shafer, Yanbin Chen, Christofer T. Nelson, Xiaoqing Pan, R. Ramesh, Chang‐Beom Eom
Jaesun Song, Taemin Ludvic Kim, Jongmin Lee, Sam Yeon Cho, Jaeseong Cha, Sang Yun Jeong, Hyunji An, Wan Sik Kim, Yen-Sook Jung, Jiyoon Park, Gun Young Jung, Dong‐Yu Kim, Ji Young Jo, Sang Don Bu, Ho Won Jang, Sanghan Lee
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