Enhancing BiVO4 photoanode performance by insertion of an epitaxial BiFeO3 ferroelectric layer

Haejin Jang; Yejoon Kim; Hojoong Choi; Jiwoong Yang; Yoonsung Jung; Sungkyun Choi; Donghyeon Lee; Ho Won Jang; Sanghan Lee

doi:10.1016/j.jechem.2023.10.041

Discussion(0)

No comments yet. Be the first to comment.

Related publications

Article2008

Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO3 thin films

Ho Won Jang, Seung‐Hyub Baek, Daniel Ortiz, C. M. Folkman, R. R. Das, Ying‐Hao Chu, J. X. Zhang, V. Vaithyanathan, Samrat Choudhury, Y. B. Chen, Xiaoqing Pan, Darrell G. Schlom, Long‐Qing Chen, R. Ramesh, Chang‐Beom Eom

Article2010

Study of defect-dipoles in an epitaxial ferroelectric thin film

C. M. Folkman, Seung‐Hyub Baek, Christopher T. Nelson, Ho Won Jang, Thomas Tybell, Xiaoqing Pan, Chang‐Beom Eom

Article2012

ChemInform Abstract: Enhancement in the Performance of Ultrathin Hematite Photoanode for Water Splitting by an Oxide Underlayer.

Takashi Hisatomi, Hen Dotan, Morgan Stefik, Kevin Sivula, Avner Rothschild, Michael Graetzel, Nripan Mathews

Article2024

High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide

Jae Young Kim, Min‐Ju Choi, Yoon Jung Lee, Sung Hyuk Park, Sungkyun Choi, Ji Hyun Baek, In Hyuk Im, Seung Ju Kim, Ho Won Jang

Article2016

Enhancing the Capacitive Performance of Electric Double-Layer Capacitors with Ionic Liquid Mixtures

Cheng Lian, K. Liu, Katherine L. Van Aken, Yury Gogotsi, David J. Wesolowski, H. L. Liu, De‐en Jiang, Jianzhong Wu