Electron Microscopy in Optimizing Microstructure and Mechanical Properties of Hot-Pressed Silicon Carbide

SiC, as one of the most promising candidate ceramics for high temperature structural applications, offers many intrinsic advantages, including high melting temperatures, low density, and high elastic modulus. However, the use of SiC to date has been severely limited by its poor fracture toughness (∽ 2-3 MPa√m for commercially available materials) and crack-growth resistance. Our study focuses on the development of silicon carbide as a potentially tough, high-temperature, and damage-tolerant material. The approaches include identifying roles of sintering additives in modifying grain morphology, effects of post-annealing on grain boundary phases, and possibility in introducing nanoscale precipitates in SiC grains. Central in these efforts is structural characterization using state-of-the-art electron microscopy. The first success was in situtoughening the SiC, by hot pressing in the presence of A1, B and C additions. Elongated and interlocked grains were developed surrounded by an Al-containing amorphous grain boundary film.