Electrical Characteristics and Chemical Stability of Non-Oxidized, Methyl-Terminated Silicon Nanowires
Article 2006 en
Authors
HH
Hossam Haick
PH
Patrick T. Hurley
AH
Allon I. Hochbaum
Abstract
1 min read
Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (+/-2 V).
Garry W. Mudd, Simon A. Svatek, Lee Hague, O. Makarovsky, Z. R. Kudrynskyi, Christopher J. Mellor, Peter H. Beton, L. Eaves, Konstantin ‘kostya’ Novoselov, Z. D. Kovalyuk, Evgeny E. Vdovin, Alexander J. Marsden, Neil R. Wilson, A. Patanè
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