Lead halide materials have seen a recent surge of interest from the photovoltaics community following the observation of surprisingly high photovoltaic performance, with opto-electronic properties similar to GaAs. This begs the question; what is the limit for the efficiency of these materials? In this article, we show that Methyl Ammonium Lead Iodide (MAPbI3), like silicon, has a larger than expected Auger coefficient, decreasing the theoretical external luminescence efficiency to ~95% at opencircuit. The Auger penalty is much reduced at the operating point where the carrier density is less, producing an oddly high fill factor of ~90.4%. This compensates the Auger penalty and leads to an operating point voltage and power conversion efficiency close to ideal for the MAPbI3 bandgap.
Anwar Q. Alanazi, Masaud Almalki, Aditya Mishra, Dominik J. Kubicki, Zaiwei Wang, Lena Merten, Felix T. Eickemeyer, Hong Zhang, Dan Ren, A. Alyamani, Hamad Albrithen, Abdulrahman Albadri, Mohammad Hayal Alotaibi, Alexander Hinderhofer, Shaik M. Zakeeruddin, Frank Schreiber, Anders Hagfeldt, Lyndon Emsley, Jovana V. Milić, Michael Graetzel
Anwar Q. Alanazi, Masaud Almalki, Aditya Mishra, Dominik J. Kubicki, Zaiwei Wang, Lena Merten, Felix T. Eickemeyer, Hong Zhang, Dan Ren, A. Alyamani, Hamad Albrithen, Abdulrahman Albadri, Mohammad Hayal Alotaibi, Alexander Hinderhofer, Shaik M. Zakeeruddin, Frank Schreiber, Anders Hagfeldt, Lyndon Emsley, Jovana V. Milić, Michael Graetzel
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