The Ta2O5 films were deposited by reactive sputtering,the effects of volume flow ratio Ψ(O2:Ar) on the electrical properties of Ta2O5 films were studied.The results show that the prepared films are polycrystal with tetragonal structure of β-Ta2O5 after annealing.With the increase of Ψ(O2:Ar) value,the deposited rate,the equivalent oxide thickness and the moving ionic charge density decrease,while the accumulation capacitance and the flatband capacitance increase.The deposited Ta2O5 films possess the highest dielectric constant of 38.32 when Ψ(O2:Ar) = 6:5.When Ψ(O2:Ar)=2:5,the leakage current density is minimum,only 7.7×10-7 A/cm2.
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