Effects of annealing ambient on oxygen vacancies and phase transition temperature of VO<sub>2</sub> thin films
Article 2016 en
Authors
HX
Huiyan Xu
YH
Yuhong Huang
SL
Siyuan Liu
Abstract
1 min read
VO<sub>2</sub> thin films are prepared on Si substrates by direct-current (DC) magnetron sputtering at room temperature and annealed in vacuum at different argon pressures.
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