Dynamic Structure Factor of Liquid and Amorphous Ge From Ab Initio Simulations
APS April Meeting Abstracts 2003
Article 2003 English
Authors
JC
Jeng‐Da Chai
DS
D. Stroud
JH
Juergen Hafner
Abstract
1 min read
We calculate the dynamic structure factor $S(k,\ensuremath{\omega})$ of liquid Ge $(l$-Ge) at temperature $T=1250\mathrm{}\mathrm{K},$ and of amorphous Ge $(a$-Ge) at $T=300\mathrm{K},$ using ab initio molecular dynamics. The electronic energy is computed using density-functional theory, primarily in the generalized gradient approximation, together with a plane-wave representation of the wave functions and ultrasoft pseudopotentials. We use a 64-atom cell with periodic boundary conditions, and calculate averages over runs of up to about 16 ps. The calculated liquid $S(k,\ensuremath{\omega})$ agrees qualitatively with that obtained by Hosokawa et al. [Phys. Rev. B 63, 134205 (2001)] using inelastic x-ray scattering. In a-Ge, we find that the calculated $S(k,\ensuremath{\omega})$ is in qualitative agreement with that obtained experimentally by Maley et al. [Phys. Rev. Lett. 56, 1720 (1986)]. Our results suggest that the ab initio approach is sufficient to allow approximate calculations of $S(k,\ensuremath{\omega})$ in both liquid and amorphous materials.
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