Double-Channel Piezotronic Transistors for Highly Sensitive Pressure Sensing

Piezotronic transistors (PTs) that utilize inner crystal potential generated by interface piezoelectric polarization charges as the gate voltage have great potential applications in force/pressure-triggered or controlled electronic devices, sensors, human–machine communication, and microelectromechanical systems. Although the performance of PTs has been partially enhanced by exploring special materials with different geometries or high piezoelectricity, few studies have been focused on the structure design of PT itself to more effectively enhance the performance and structural reliability. Here, an integrated double-channel plane piezotronic transistor is invented as a high-performance pressure-sensing technology. Owing to the double-channel modulation and the plane structure, the PT has the merits of high pressure sensitivity (84.2–104.4 meV/MPa) and high structural reliability, which provides the opportunity for great applications, such as human–computer interfacing, biosensing, and health monitoring.