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Dopant profiling and surface analysis of silicon nanowires using capacitance–voltage measurements — Erik C. Garnett (2009) | RDL Network
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Dopant profiling and surface analysis of silicon nanowires using capacitance–voltage measurements
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Peidong Yang
University of California, Berkeley
Dopant profiling and surface analysis of silicon nanowires using capacitance–voltage measurements
Article
2009
en
Authors
+3 more
EG
Erik C. Garnett
YT
Yu‐Chih Tseng
DK
D. R. Khanal
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