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Direct lattice imaging of silicon carbide — Pratibha L. Gai (1975) | RDL Network

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Direct lattice imaging of silicon carbide

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Jawaharlal Nehru Centre for Advanced Scientific Research

Direct lattice imaging of silicon carbide

Journal of Physics D Applied Physics 8(13): L157-L158

Article 1975 English

Authors

PG
Pratibha L. Gai
JA
John S. Anderson
Cnr Rao
Jawaharlal Nehru Centre for Advanced Scientific Research

Abstract

1 min read

The high-resolution electron microscopic technique of lattice imaging shows 15 and 3 AA repeat sequences in 6H SiC. The 15 AA sequence is further resolved into 2.5 AA layers corresponding to the interlayer separation.

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Publication Info

DOI: 10.1088/0022-3727/8/13/002
Year: 1975
Published: —
Language: English

Article Details

Journal Name: Journal of Physics D Applied Physics
Volume: 8
Issue: 13
Pages: L157-L158
Link Of The Paper: https://doi.org/10.1088/0022-3727/8/13/002

Timeline

Created:June 19, 2026

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