Skip to content
RDL
Network
Ekosistem
Uygulama değiştir
EN
Hakkımızda
SSS
Giriş yap
Başla
Direct bonding of GaAs films on silicon circuits by epitaxial liftoff — Ali Erşen (1993) | RDL Network
Back
Cite
Save
Save for later
Share
Home
Publications
Direct bonding of GaAs films on silicon circuits by epitaxial liftoff
Shared by
Eli Yablonovitch
University of California, Berkeley
Direct bonding of GaAs films on silicon circuits by epitaxial liftoff
Article
1993
en
Authors
+1 more
AE
Ali Erşen
IS
I. Schnitzer
Eli Yablonovitch
University of California, Berkeley
Discussion
(0)
Sign in
to like and join the discussion.
No comments yet. Be the first to comment.
Related publications
Article
1999
Vapor phase epitaxial liftoff of GaAs and silicon single crystal films
Wen-Hsin Chang
,
Chih‐Fen Kao
,
Guido A. Pike
,
J.A Slone
,
Eli Yablonovitch
Article
1990
Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
Eli Yablonovitch
,
D. M. Hwang
,
T.J. Gmitter
,
L. T. Florez
,
J. P. Harbison
Article
1997
Vapor Phase Epitaxial Liftoff of GaAs
Wei Chang
,
Guido A. Pike
,
C.-C. Kao
,
Eli Yablonovitch
Article
1997
Thin film GaAs solar cells on glass substrates by epitaxial liftoff
Xin-Ping Lee
,
M. Goertemiller
,
Misha Boroditsky
,
Regina Ragan
,
Eli Yablonovitch
Article
1996
Thin film GaAs solar cells on glass substrates by epitaxial liftoff
X.Y. Lee
,
Ashish Verma
,
Chia‐Yin Wu
,
M. Goertemiller
,
Eli Yablonovitch
,
J. Eldredge
,
D.R. Lillington
Discussion(0)
No comments yet. Be the first to comment.