Ultra-thin dendrimer films are effective resists for high-resolution lithography using a scanning probe. The authors describe dendritic monolayer formation via covalent attachment to a silicon wafer surface and the field-enhanced oxidation of the dendrimer monolayers using scanning probe lithography to create features with dimensions less than 60 nm. Poly-(benzyl ether) dendrimers, terminated with either benzyl or tert-butyldiphenylsilyl ether groups, were used because of their relative ease of preparation and derivatization.
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