Defect‐Engineered Atomically Thin MoS₂ Homogeneous Electronics for Logic Inverters

Ultrathin molybdenum disulfide (MoS₂ ) presents ideal properties for building next-generation atomically thin circuitry. However, it is difficult to construct logic units of MoS₂ monolayer using traditional silicon-based doping schemes, such as atomic substitution and ion implantation, as they cause lattice disruption and doping instability. An accurate and feasible electronic structure modulation strategy from defect engineering is proposed to construct homogeneous electronics for MoS₂ monolayer logic inverters. By utilizing the energy-matched electron induction of the solution process, numerous pure and lattice-stable monosulfur vacancies (V_monos ) are introduced to modulate the electronic structure of monolayer MoS₂ via a shallow trapping effect. The resulting modulation effectively reduces the electronic concentration of MoS₂ and improves the work function by 100 meV. Under modulation of V_monos , an atomically thin homogenous monolayer MoS₂ logic inverter with a voltage gain of 4 is successfully constructed. A brand-new and practical design route of defect modulation for 2D-based circuit development is provided.