Controlling surface recombination in a nanoscale III-V light emitting diode

Seth A. Fortuna; Christopher Heidelberger; Nicolas M. Andrade; Eli Yablonovitch; Ming C. Wu

doi:10.1109/ipcon.2017.8115993

Abstract

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We demonstrate low surface recombination velocity (~8700 cm/s) and reduction of non-radiative lifetime in an InP/InGaAs nanoscale light emitting diode using a sacrificial Al2O3 layer. We predict high efficiency operation after modest enhancement of spontaneous emission rate with an optical antenna.

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