Continuous <i>c</i>-Oriented AlPO<sub>4</sub>-5 Films by Tertiary Growth
Chemistry of Materials 19(4): 792-797
Article 2007 English
Authors
GK
Georgios N. Karanikolos
JW
James W. Wydra
JS
Jared A. Stoeger
Abstract
1 min read
c-Oriented AlPO4-5 films were synthesized by seeded growth on silicon substrates. Secondary hydrothermal treatment of the seeded substrates under conditions that favor c-out-of-plane growth yielded non-intergrown, highly oriented columnar crystals with a length of 7 μm. Modifying the conditions so that in-plane growth is favored and executing yet another ("tertiary") growth, the crystals obtained by secondary treatment were grown in-plane, along the a-, b-directions, filling the gaps between the columnar grains and yielding well-intergrown, highly oriented, continuous AlPO4-5 films. The oriented films obtained by the technique presented here can be potentially useful for separations and catalysis as well as electronic and electrochemical applications.
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