Skip to content
RDL
Network
Ecosystem
Switch app
TR
About
FAQ
Sign in
Get started
Contamination Issues in Semiconductor Plasma Immersion Ion Implantation — Paul Kim Ho Chu (2001) | RDL Network
Back
Cite
Save
Save for later
Share
Home
Publications
Contamination Issues in Semiconductor Plasma Immersion Ion Implantation
Shared by
Paul Kim Ho Chu
Contamination Issues in Semiconductor Plasma Immersion Ion Implantation
Article
2001
en
Authors
Paul Kim Ho Chu
Related publications
Article
2002
Contamination issues in hydrogen plasma immersion ion implantation of silicon—a brief review
Paul Kim Ho Chu
Article
2003
Semiconductor applications of plasma immersion ion implantation
Paul Kim Ho Chu
Article
Discussion
(0)
Sign in
to like and join the discussion.
No comments yet. Be the first to comment.
2001
Metallic contamination in hydrogen plasma immersion ion implantation of silicon
Paul Kim Ho Chu
,
Ricky K.Y. Fu
,
Xuchu Zeng
,
Dixon T. K. Kwok
Article
1996
Plasma immersion ion implantation—a fledgling technique for semiconductor processing
Paul Kim Ho Chu
,
Shu Qin
,
Chung Chan
,
N.W. Cheung
,
Lawrence A. Larson
Article
1999
Surface metal contamination on silicon wafers after hydrogen plasma immersion ion implantation
Zhineng Fan
,
Xuchu Zeng
,
Paul Kim Ho Chu
,
Chung Chan
,
Masaharu Watanabe
Discussion(0)
No comments yet. Be the first to comment.