Comparison of NPT and PT IGBT-devices for hard switching applications

Two main directions in the development of IGBTs are used in order to improve performance both statically and dynamically. One direction is punch-through (PT) technology with lifetime killers and low on-state losses. The other direction is nonpunch-through (NPT) technology which has a simpler device development process and lower switching losses. The NPT device has a high blocking capability while the PT is difficult to control during the device process for higher blocking voltages. This paper makes a detailed comparison between the PT and NPT devices for hard switching applications. The comparison is done by extended use of measurements on an advanced measurement system. Both static and dynamic measurements are carried out as well as nondestructive and destructive short circuits are performed. Static measurements are carried out on thirty devices from each technology while the dynamic measurements are done on five selected devices. It is concluded that the PT device has the best static performance at high temperature (125/spl deg/C). The PT device has excellent turn-off performance at low temperature (25/spl deg/C) while the NPT technology has the best turn-off performance at high temperature and it has, in general, the smallest device variation statically. The NPT device has also a superior short circuit capability both during single nondestructive short pulse tests and destructive short circuit tests. Finally, it is concluded that both device technologies have benefits and disadvantages and the choice of technology depends on the specific application.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>