Chemically Tailored Semiconductor Moiré Superlattices of Janus Heterobilayers
Article 2024 en
Authors
WZ
Wenjin Zhang
ZL
Zheng Liu
HN
Hiroshi Nakajo
Abstract
1 min read
Janus Heterobilayers In article number 2300514, Wenjin Zhang, Toshiaki Kato, Yasumitsu Miyata, and co-workers prepare MoSSe/MoSe2 (or WSSe/WSe2) Janus heterobilayers by replacing the top layer Se atoms with S atoms in MoSe2 (or WSe2) bilayer using H2 plasma treatment. Scanning transmission electron microscopy reveals that an average moiré period of about 14 nm form due to lattice mismatch resulting from the chalcogen substitutions.
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