Cellular neural networks based on resonant tunnelling diodes

Abstract Resonant tunnelling diodes (RTDs) have intriguing properties which make them a primary nanoelectronic device for both analogue and digital applications. We propose two different types of RTD‐based cells for the cellular neural network (CNN) which exhibit superior performance in terms of complexity, functionality, or processing speed compared to standard cells. In the first cell model, the resistor of the standard cell is replaced by an RTD, which results in a more compact and versatile cell which requires neither self‐feedback nor a non‐linear output function, and allows three stable equilibrium points. If a resonant tunnelling transistor (RTT) is used instead of the RTD, the dynamics can be controlled through its gate voltage as an additional network parameter. In a majority of CNN applications, bistable cells are sufficient. Utilizing RTD‐based bistable logic elements to store the state of the cell, switching occurs almost instantaneously as virtually no charge transfer is necessary, and it is possible to implement non‐linear connections in a straightforward manner. Hence, it turns out that RTD‐based CNNs are tailor‐made for the implementation of extremely fast bipolar operations and non‐linear templates. The ideas presented in this paper may also be beneficially applied to other types of circuits and systems such as A/D converters or sigma‐delta modulators. Copyright © 2001 John Wiley & Sons, Ltd.