Cathodic Arc Plasma Deposition of Niobium Nitride Films

NbN films were deposited on Si wafers wity two methods:a) cathodic arc deposition and b) cathodic arc deposition enhanced by dynamic plasma immersion ion implantation. The atomic frction of N in the coatings increases as the substrate temperature increases at first, and then decreases slightly. The grain size of δ NbN increases as the deposition temperature increases. From RT to 300℃,the δ NbN phase has a selected orientation of (220) . The film deposited at 500℃ has a selected orientation of (200). Smooth coatings could not be obtained until the substrate temperature increased to 500℃ with method a). Smooth and denser δ NbN coating was fabricated with method b) at low temperature. The film deposired with method b) has the highest atomic fraction of N. Selected orientation is not evident in this film.