Calculation of semiconductor band gaps with the M06-L density functional

Yan Zhao; Donald G Truhlar

doi:10.1063/1.3076922

Abstract

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The performance of the M06-L density functional has been tested for band gaps in seven semiconductors plus diamond and MgO. Comparison with the local spin density approximation (LSDA), Becke-Lee-Yang-Parr (BLYP), Perdew-Burke-Eernzerhof (PBE), Tao-Perdew-Staroverov-Scuseria (TPSS), and Heyd-Scuseria-Ernzerhof (HSE) functionals shows that M06-L has improved performance for calculating band gaps as compared to other local functionals, but it is less accurate than the screened hybrid HSE functional for band gaps.

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Calculation of semiconductor band gaps with the M06-L density functional

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