Abstract : During the past 3 years, we have exploited the memristor's enabling potentials for designing intelligent machines with learning and adaptive capabilities. We have conducted an in-depth study of the nonlinear dynamics of several ion-channels which underpins the biological basis of life itself, where voltage-gated ion channels, with their complex biochemical synaptic dynamics, are memristors. We have discovered that the Hodgkin-Huxley axon is made of memristors, in addition to conventional circuit elements. In particular, we have proved that the potassium voltage-gated ion channel is a first-order voltage-controlled memristor, and that the sodium voltage-gated ion channel is a second-order voltage-controlled memristor. We have derived the DC V-I curves of the potassium and sodium ion channels, as well as that of the Hodgkin-Huxley Axon. The most significant result of our 3-year research is our derivation of the memristor-based Hodgkin-Huxley Axon circuit model, which along with our principle of local activity and its gem, the edge of chaos, allow us to resolve 3 fundamental unsolved problems from Neurobiology, including the precise nonlinear dynamical mechanism which gives rise to the action potential.
Alon Ascoli, Ahmet Şamil Demirkol, Ioannis Messaris, Vasileios Ntinas, Dimitrios Prousalis, Stefan Slesazeck, Thomas Mikolajick, Fernando Corinto, Michele Bonnin, Marco Gilli, Pier Paolo Civalleri, Ronald Tetzlaff, Leon O Chua
Discussion(0)
No comments yet. Be the first to comment.