Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

Eduardo V. Castro; J. M. B. Lopes dos Santos; N. M. R. Peres; Konstantin ‘kostya’ Novoselov; С. В. Морозов; A. K. Geǐm; F. Guinea; Johan Nilsson; A. H. Castro Neto

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Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

Eduardo V. Castro, Konstantin ‘kostya’ Novoselov, С. В. Морозов, N. M. R. Peres, J. M. B. Lopes dos Santos, Johan Nilsson, F. Guinea, A. K. Geǐm, A. H. Castro Neto

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A. K. Geǐm, Konstantin ‘kostya’ Novoselov, Da Jiang, Yaun Zhang, Timothy J. Booth, I. V. Grigorieva, Sergey Morozov, А. А. Firsov, S. V. Dubonos

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Infrared observation of gate-tunable bandgap and a giant Fano electron-phonon resonance in bilayer graphene

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