Bi-epitaxial YBCO grain boundary Josephson junctions on SrTiO3 and sapphire substrates

Andrei Kudriashov, Xiong Zhou, Razmik A. Hovhannisyan, А. С. Фролов, L. Elesin, Yi Bo Wang, E. V. Zharkova, Takashi Taniguchi, Kenji Watanabe, Zheng Liu, Konstantin ‘kostya’ Novoselov, Lada V. Yashina, Xin Zhou, D. A. Bandurin

Article1989

High-speed InP/InGaAs photodiode on sapphire substrate prepared by epitaxial lift-off

H Schumacher, T.J. Gmitter, H.P. LeBlanc, R. Bhat, Eli Yablonovitch, M.A. Koza

Bi-epitaxial YBCO grain boundary Josephson junctions on SrTiO3 and sapphire substrates

Discussion(0)

Related publications

Fabrication and characterization of YBCO Josephson junctions based on artificially generated bi-epitaxial grain boundary

Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective

Microstructure of epitaxial La0.7Ca0.3MnO3 thin films grown on LaAlO3 and SrTiO3

Non-Majorana origin of anomalous current-phase relation and Josephson diode effect in Bi <sub>2</sub> Se <sub>3</sub> /NbSe <sub>2</sub> Josephson junctions

High-speed InP/InGaAs photodiode on sapphire substrate prepared by epitaxial lift-off