Band gap engineering design for construction of energy-levels well-matched semiconductor heterojunction with enhanced visible-light-driven photocatalytic activity — Hongwei Huang (2014) | RDL Network
Band gap engineering design for construction of energy-levels well-matched semiconductor heterojunction with enhanced visible-light-driven photocatalytic activity
Article 2014 en
Authors
HH
Hongwei Huang
SW
Shuobo Wang
YZ
Yihe Zhang
Abstract
1 min read
Energy-levels well-matched Mg<sub>1−x</sub>Cu<sub>x</sub>WO<sub>4</sub>/Bi<sub>2</sub>WO<sub>6</sub> heterojunction was constructed based on band gap engineering. It exhibits high visible-light photoactivity for RhB degradation and photocurrent generation.
Discussion(0)
No comments yet. Be the first to comment.