Atomic Layer Deposition Seeded Growth of Rutile SnO₂ Nanowires on Versatile Conducting Substrates

Extended and oriented rutile nanowires (NWs) hold great promise for numerous applications because of their various tunable physicochemical properties in air and/or solution media, but their direct synthesis on a wide range of conducting substrates remains a significant challenge. Their device performance is governed by relevant NW geometries that cannot be fully controlled to date by varying bulk synthetic conditions. Herein, orientation engineering of rutile SnO₂ NWs on a variety of conducting substrates by atomic layer deposition (ALD) seeding has been investigated. The seeded growth controls the nucleation event of the NW, and thicknesses and crystallographic properties of seed layers are the key parameters toward tuning the NW characteristics. The seed layers on carbon cloth produce NWs with highly enhanced electrochemically active surface area, which would show efficient electrochemical CO₂ reduction. In addition, the hierarchical architecture resulted from the seeded growth of NWs on SnO₂ nanosheets allows thin layers of BiVO₄, forming a heterojunction photoanode, which shows a record charge separation efficiency of 96.6% and a charge-transfer efficiency of 90.2% at 1.23 V versus the reversible hydrogen electrode among, to date, the reported BiVO₄-based photoanodes for water oxidation. Our study illustrates that such a versatile interfacial engineering effort by the ALD technique would be promising for further wide range of practical applications.