Anomalous Hall effect in Bernal tetralayer graphene enhanced by spin–orbit interaction

Abstract Spin–orbit interaction (SOI) can be introduced by the proximity effect to modulate the electronic properties of graphene-based heterostructures. In this work, we stack trilayer WSe 2 on Bernal tetralayer graphene to investigate the influence of SOI on the anomalous Hall effect (AHE). In this structurally asymmetric device, by comparing the magnitude of AHE at positive and negative displacement fields, we find that AHE is strongly enhanced by bringing electrons in proximity to the WSe 2 layer. Meanwhile, the enhanced AHE signal persists up to 80 K, providing important routes for topological device applications at high temperatures.