Abstract : A state-of-the-art, metal-organic chemical vapor deposition (MOCVD) system was acquired and successfully installed. The instrumentation is capable of growth of group-III nitride alloys with control down to the atomic level. The new system has been used to grow novel gallium nitride nanowires, including gallium nitride/indium-gallium nitride/p-type gallium nitride core/shell/shell heterostructures. Structural measurements demonstrate the successful growth of these new nanomaterials, and moreover, physical measurements demonstrate that these new nanowire heterostructures enable high-efficiency blue nanoscale light-emitting diodes.
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