Skip to content
RDL
Network
Ekosistem
Uygulama değiştir
EN
Hakkımızda
SSS
Giriş yap
Başla
A Self-Aligned Silicide Technology using Ion-Beam Mixing, Doped Silicide, and Rapid Thermal Processing — Y. H. Ku (1989) | RDL Network
Back
Cite
Save
Save for later
Share
Home
Publications
A Self-Aligned Silicide Technology using Ion-Beam Mixing, Doped Silicide, and Rapid Thermal Processing
Shared by
Paul Kim Ho Chu
A Self-Aligned Silicide Technology using Ion-Beam Mixing, Doped Silicide, and Rapid Thermal Processing
Article
1989
en
Authors
+1 more
YK
Y. H. Ku
SL
S. K. Lee
DK
Dim‐Lee Kwong
Discussion
(0)
Sign in
to like and join the discussion.
No comments yet. Be the first to comment.
Related publications
Article
1990
Growth of <i>in</i> <i>situ</i> doped silicon epitaxial layer by rapid thermal processing
S. K. Lee
,
Y. H. Ku
,
T. Y. Hsieh
,
Keun‐Hwa Jung
,
D. L. Kwong
,
D. B. Spratt
,
Paul Kim Ho Chu
Article
1994
Rapid Thermal Processing of Shallow Junctions Using Epitaxial CoSi<sub>2</sub> as a Doping Source
Erin Jones
,
Shinichi Ogawa
,
Paul Ameika
,
M.L.A. Dass
,
David B. Fraser
,
Paul Kim Ho Chu
,
N.W. Cheung
Article
2004
Rapid Prototyping of Site-Specific Nanocontacts by Electron and Ion Beam Assisted Direct-Write Nanolithography
V. Gopal
,
Velimir Radmilović
,
Chiara Daraio
,
Sung‐Ho Jin
,
Peidong Yang
,
Eric A. Stach
Chapter in a book
2001
Measurements of the Nonlinear Coefficient N2/Aeff Using a Self-Aligned Interferometer and a Faraday Mirror
Claudio Vinegoni
,
M. Wegmüller
,
Nicolas Gisin
Article
2010
Patterning of ultrathin YBCO nanowires using a new focused-ion-beam process
Noé Curtz
,
E. Köller
,
Hugo Zbinden
,
M. Decroux
,
L. Antognazza
,
Ø. Fischer
,
Nicolas Gisin
Superconductor Science and Technology
Discussion(0)
No comments yet. Be the first to comment.