Abstract A nonlinear lumped circuit model for Gunn diodes which includes the effects due to domain extinction and nucleation phenomena is presented. The model is based upon physical principles and allows an arbitrary nonlinear drift velocity curve v ( E ) and a nonlinear diffusion curve D(E) to be specified by the user. It is valid for simulating arbitrary Gunn‐diode circuits operating in any matured high‐field domain mode, or in the LSA mode. Under additional assumptions, the model simplifies to other existing models. Several computer‐simulated examples of Gunn‐diode circuits operating under both steady‐state and transient regimes are presented. Finally, a rigorous definition of a ‘DC’ I‐V curve for Gunn diodes is offered and shown to be rather useful for predicting the qualitative behaviour of Gunn‐diode circuits during all time intervals where a matured domain exists.
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