A Modification of Offset Strip Fin Heatsink with High-Performance Cooling for IGBT Modules

For reliability and thermal management of power devices, the most frequently used technique is to employ heatsinks. In this work, a new configuration of offset strip fin heatsink based on using the concept of curvy fins and U-turn is proposed with the aim of improving the heat transfer performance. With this aim, a three-dimensional model of heatsink with Silicon Insulated-Gate Bipolar Transistors (IGBTs) and diodes, solder, Direct Bonded Copper (DBC) substrate, baseplate and thermal grease is developed. Richardson’s extrapolation is used for increasing the accuracy of the numerical simulations and to validate the simulations. To study the effectiveness of the new offset design, results are compared with conventional offset strip fin heatsink. Results show that in aspects of design of heatsinks (including heat transfer coefficient, maximum chip temperature and thermal resistance), the new introduced model has advantages compared to the conventional offset strip fin design. These enhancements are caused by the combination of the longer coolant passage in the heatsink associated with generation of disturbance and recirculation areas along the curvy fins, creation of centrifugal forces in the U-turn, and periodic breaking up boundary layers. Also, it is shown that due to narrower passage and back-and-forth route, the new introduced design can handle the hot spots better than conventional design.