A highly conducting graphene film with dual-side molecular n-doping

Youngsoo Kim; Jaesung Park; Junmo Kang; Je Min Yoo; Kyoungjun Choi; Eun Sun Kim; Jae‐Boong Choi; Chanyong Hwang; Konstantin ‘kostya’ Novoselov; Byung Hee Hong

doi:10.1039/c4nr00479e

Abstract

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We demonstrate a simple method to tune the electrical properties of graphene synthesized by chemical vapor deposition (CVD) with dual-side chemical doping – the bottom-side doping<italic>via</italic>substrate modification with NH<sub>2</sub>-SAMs and the top-side doping with diethylenetriamine (DETA) molecules.

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