A 2-Layer Resist System Derived From Trimethylsilylstyrene

Scott Macdonald; Robert D. Allen; Nicholas J. Clecak; C. Grant Willson; Jean Mj Frechet

doi:10.1117/12.963622

Abstract

1 min read

This paper describes the design and preparation of a negative tone, oxygen etch resistant DUV photoresist. This two-component resist system is composed of an oxygen plasma etch resistant matrix resin, poly(trimethylsilylmethylstyrene), and a monomeric radical generator such as trichlorobenzene or 3,3'-diazidodiphenylsulfone.

Discussion(0)

No comments yet. Be the first to comment.

Related publications

Article1997

A Water-Castable, Water-Developable Chemically Amplified Negative-Tone Resist

Qinghuang Lin, Thomas Steinhäusler, Logan Simpson, Michelle Wilder, David R. Medeiros, C. Grant Willson, Jennifer M. Havard, Jean Mj Frechet

Article1996

<title>Water-soluble resist for environmentally friendly lithography</title>

Qinghuang Lin, Logan Simpson, Thomas Steinhaeusler, Michelle Wilder, C. Grant Willson, Jennifer M. Havard, Jean Mj Frechet

Article1999

Design of photoresists with reduced environmental impact. II. Water-soluble resists based on photocrosslinking of poly(2-isopropenyl-2-oxazoline)

JenniferM. Havard, Masahiro Yoshida, Dario Pasini, Nikolay Vladimirov, Jean Mj Frechet, David R. Medeiros, K. Patterson, Shintaro Yamada, C. Grant Willson, Jeffrey D. Byers

Article2005

Generating an Etch Resistant “Resist” Layer from Common Solvents Using Scanning Probe Lithography in a Fluid Cell

Itai Suez, Scott A. Backer, Jean Mj Frechet